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General Purpose and Low VCE(sat) Transistors | 2N3055H

Transistor Silicon Power NPN

Obsolete

Datasheet

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Overview

The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.

  • DC Current Gain - hFE = 20-70 @ IC = 4 Adc
  • Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
  • Excellent Safe Operating Area
  • Pb-Free Packages are Available

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Package Type

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MSL Type

MSL Temp (掳C)

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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PTM Max (W)

Reference Price

2N3055H

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Obsolete

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CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

N

-

General Purpose

-

-

-

-

-

-

-

20

70

2.5

115

Price N/A

More Details

2N3055HG

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Obsolete

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CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

N

-

General Purpose

-

-

-

-

-

-

-

20

70

2.5

115

Price N/A

More Details

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