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General Purpose and Low VCE(sat) Transistors | 2N3773

16 A, 140 V NPN Bipolar Power Transistor

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Overview

The 2N3773 is a power transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters.

  • High Safe Operating Area (100% Tested) 150 W @ 100 V
  • Completely Characterized for Linear Operation
  • High DC Current Gain and Low Saturation Voltage
    hFE = 15 (Min) @ 8 A, 4 V
    VCE(sat) = 1.4 V (Max) @ IC = 8 A, IB = 0.8 A
  • For Low Distortion Complementary Designs

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Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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Reference Price

2N3773G

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CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

N

NPN

General Purpose

4

16

140

160

7

-

2.2

15

60

4

150

$3.9516

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Reliability Data

Die Related Summary Data

Device: 2N3773G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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