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General Purpose and Low VCE(sat) Transistors | FJP13009

High-Voltage Fast-Switching NPN Power Transistor

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Overview

The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is available with multiple hFE bin classes for ease of design use. The FJP13009 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent power dissipation.

  • This product is general usage and suitable for many different applications.

  • High-Voltage Capability
  • High Switching Speed

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VCE(sat) Max (V)

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VCEO Min (V)

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FJP13009H2TU

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Active

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

NPN

High Voltage Fast-Switching Power Transistor

3

12

400

700

9

1.6

-

15

40

4

100

$0.8478

More Details

FJP13009TU

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Active

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

NPN

High Voltage Fast-Switching Power Transistor

3

12

400

700

9

1.6

-

8

40

4

100

$0.5733

More Details

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Reliability Data

Die Related Summary Data

Device: FJP13009H2TU

Equivalent to wafer fab process: TM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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