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IGBTs | AFGB40T65SQDN

IGBT, 650V FS4 High speed version, for OBC application in D2pak

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Overview

Using the novel field stop 4th generation IGBT technology and AEC-Q101 Qualified. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.

  • Automotive On Board Charge
  • Automotive DC/DC converter for HEV

  • EV/PHEV

  • AEC-Q101 qualified
  • VCE(sat) = 1.6 V (typ.) @ IC = 40 A
  • Low VF soft recovery co-packaged diode

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Package Type

Case Outline

MSL Type

MSL Temp (掳C)

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Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (碌s)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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AFGB40T65SQDN

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

REEL

800

Y

-

650

40

1.6

1.5

0.229

0.858

131

-

76

-

-

238

Yes

$2.6054

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Reliability Data

Die Related Summary Data

Device: AFGB40T65SQDN

Equivalent to wafer fab process: IGN IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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