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IGBTs | AFGHL75T65SQDC

IGBT with SiC copack diode

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Overview

Using the novel field stop 4th generation IGBT technology and the1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDCoffers the optimum performance with both low conduction andswitching losses for high efficiency operations in various applications,especially totem pole bridgeless PFC and Inverter

  • Totem pole bridgeless PFC
  • On Board chargers
  • HV DC-DC converters

  • Hybrid Electric Vehicles
  • Battery electric vehicles

  • SiC schottky co-pack diode
  • Fast switching IGBT
  • AEC-Q101 qualified
  • Tight parameter distribution and Positive temperature co-efficient

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V(BR)CES Typ (V)

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VCE(sat) Typ (V)

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Co-Packaged Diode

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AFGHL75T65SQDC

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Active

CAD Model

Pb

A

H

P

TO-247-3LD

340CX

NA

0

TUBE

450

Y

-

650

75

1.6

1.45

0.24

0.48

~NA~

~NA~

139

~NA~

~NA~

375

Yes

$5.7937

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Reliability Data

Die Related Summary Data

Device: AFGHL75T65SQDC

Equivalent to wafer fab process: TRENCH IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TRENCH IGBT

0

8782900981

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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