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IGBTs | AFGY160T65SPD-B4

IGBT - 650V, 160A Field Stop Trench IGBT with VCESAT and VTH Binning

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Overview

AFGY160T65SPD-B4 is a 650 V 160 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. the top side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have very close parameter distribution. This enables better current sharing in application.

  • EV traction inverter

  • Electrical Vehicles

  • AEC-Q101 Qualified and PPAP Capable
  • Vcesat and Vth binning
  • Positive Temperature Co-Efficient
  • 100% of the Parts are Dynamically Tested
  • Short circuit ruggedness > 6us @ 25掳C
  • This Device is Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
  • Copacked with Soft, Fast Recovery Extremefast Diode

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V(BR)CES Typ (V)

IC Max (A)

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AFGY160T65SPD-B4

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Active

CAD Model

Pb

A

H

P

TO-247-3

340CU

NA

0

TUBE

30

Y

-

650

240

1.6

1.4

5.7

12.4

132

~NA~

163

6

~NA~

882

Yes

$7.7908

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