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IGBTs | FGA25N120ANTDTU

IGBT, 1200V, 25A, NPT Trench

Lifetime

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Overview

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven

  • Consumer Appliances

  • NPT Trench Technology, Positive temperature coefficient
  • Low saturation voltage: VCE(sat) , typ = 2.0V@ IC = 25A and TC = 25掳C
  • Low switching loss: EOFF, typ = 0.96mJ@ IC= 25A and TC= 25掳C
  • Extremely enhanced avalanche capability

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MSL Type

MSL Temp (掳C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (碌s)

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Reference Price

FGA25N120ANTDTU-F109

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Lifetime

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CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

1200

-

-

2

0.96

4.1

-

27

200

-

-

312

-

$1.931

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Reliability Data

Die Related Summary Data

Device: FGA25N120ANTDTU-F109

Equivalent to wafer fab process: 3B,IK

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3B,IK

0

831217026

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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