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IGBTs | FGA30N65SMD

IGBT, 650V, 30A, Field Stop

Obsolete

Datasheet

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Overview

Using novel field stop IGBT technology, ON Semiconductor鈥檚 new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.

  • Maximum Junction Temperature : TJ =175oC
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) =1.98 V(Typ.) @ IC = 30 A
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

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FGA30N65SMD

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Obsolete

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CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

650

30

1.98

2.1

0.208

0.716

35

-

87

-

-

300

Yes

Price N/A

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Reliability Data

Die Related Summary Data

Device: FGA30N65SMD

Equivalent to wafer fab process: 3B,IM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3B,IM

0

975477967

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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