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Dual N-Channel 2.5V Specified PowerTrench MOSFET 20V, 0.6A, 700m惟

Last Shipments

Overview

This Dual N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5V.

  • This product is general usage and suitable for many different applications.
  • Li-Ion Battery Pack

  • 600 mA, 20 V
  • RDS(ON) = 700 m惟@ VGS = 4.5 V
  • RDS(ON) = 850 m惟 @ VGS = 2.5 V
  • ESD Protection Diode (note 3)
  • RoHS Compliant

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Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (掳C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (m惟)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (m惟)

RDS(on) Max @ VGS = 4.5 V (m惟)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDY3000NZ

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Last Shipments

CAD Model

Pb

A

H

P

SOT-563

1

260

REEL

3000

N

N-Channel

PowerTrench庐 T1

SC-6

Small Signal

Logic

0

Dual

0

20

-

12

1.3

0.6

0.625

Q1=Q2=850

Q1=Q2=700

0.8

0.8

60

-

-

-

-

Price N/A

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