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Si/SiC Hybrid Modules | NXH80B120H2Q0

Power Integrated Module, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode

Obsolete

Datasheet

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Overview

The NXH80B120H2Q0SG is a power integrated module (PIM) containing a dual boost stage consisting of two 40A/1200V IGBTs, two 15A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

  • Solar Inverter Boost Stage

  • Solar Inverter
  • UPS

  • IGBT Specifications: VCE(SAT) = 2.2 V, ESW = 2180 uJ
  • 25 A / 1600 V Bypass and Anti鈭抪arallel Diodes
  • SiC Rectifier Specification: VF = 1.4 V
  • Solderable Pins
  • Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module
  • Thermistor

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NXH80B120H2Q0SG

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Obsolete

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CAD Model

Pb

A

H

P

Q0

180AJ

NA

0

BTRAY

24

N

Dual Boost

1200

15

2.1

1.4

Price N/A

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Reliability Data

Die Related Summary Data

Device: NXH80B120H2Q0SG

Equivalent to wafer fab process: SIC

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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