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Silicon Carbide (SiC) Modules | NXH010P120MNF1

SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET

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Overview

The NXH010P120MNF1 is a EliteSiC MOSFET module containing a 10 mohm 1200V SiC MOSFET half bridge and an NTC thermistor in an F1 module.

  • AC-DC Conversion
  • DC-AC Conversion
  • DC-DC Conversion

  • Electric Vehicle Charger
  • Energy Storage System
  • Solar Inverter 3-phase
  • Uninterruptible Power Supply

  • Recommended gate voltage 18V - 20V
  • Low thermal resistance
  • Options for TIM or no TIM

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NXH010P120MNF1PG

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CAD Model

Pb

A

H

P

PIM18 33.8x42.5 (PRESS FIT)

180BW

NA

0

BTRAY

28

F

Half-Bridge

1200

10

EV Charging, Energy Infrastructure

$115.3975

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NXH010P120MNF1PNG

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CAD Model

Pb

A

H

P

PIM18 33.8x42.5 (PRESS FIT)

180BW

NA

0

BTRAY

28

F

Half-Bridge

1200

10

EV Charging, Energy Infrastructure

$100.6644

More Details

NXH010P120MNF1PTG

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CAD Model

Pb

A

H

P

PIM18 33.8x42.5 (PRESS FIT)

180BW

NA

0

BTRAY

28

F

Half-Bridge

1200

10

EV Charging, Energy Infrastructure

$115.3975

More Details

NXH010P120MNF1PTNG

Loading...

Active

CAD Model

Pb

A

H

P

PIM18 33.8x42.5 (PRESS FIT)

180BW

NA

0

BTRAY

28

F

Half-Bridge

1200

10

EV Charging, Energy Infrastructure

$94.7837

More Details

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Reliability Data

Die Related Summary Data

Device: NXH010P120MNF1PNG

Equivalent to wafer fab process: SIC

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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