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Silicon Carbide (SiC) MOSFETs Bare Die | NCS025M3E120NF06X

EliteSiC 1200V M3e Bare Die Silicon Carbide MOSFETs - 3rd Generation

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Overview

媚人视频 is proud to offer the 3rd generation of EliteSiC Silicon Carbide (SiC) MOSFETs in bare die format - optimized for use in high power applications such as EV Traction inverters, DC-DC converters, and off-board chargers. 
Based on the latest generation of SiC MOSFET technology from 媚人视频, the M3e product family offers the lowest on-resistance in its class, with optimized top and back metal options suitable for multiple packaging technologies including soldering, sintering, wire-bond, die top copper, and ribbon bonds. By utilizing 媚人视频's M3e product, packaging flexibility helps to reduce the system size, weight, application complexity, while increase power density and efficiency in traction inverter applications of electric vehicles. 
Moving from silicon based solutions to silicon carbide based solutions helps to improve efficiency and range by up to 5% in battery electric vehicle traction inverters.

  • Main Traction Inverter Applications
  • High Voltage DC/DC Converters
  • Off-Board Chargers

  • 1200V SiC MOSFET Bare Dice

  • 3rd Generation SiC MOSFET
  • High Blocking Voltage 1200V
  • Low Conduction Losses Over Temperature

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NCS025M3E120NF068-09

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Pb

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EliteSiC M3e

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NCS025M3E120NT066-09

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H

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-

-

NA

0

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3000

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EliteSiC M3e

1200

150

11

204

221

175

Y

Price N/A

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