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Silicon Carbide (SiC) MOSFETs | NTH4L040N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • PFC
  • Boost Inverter
  • PV Charging

  • Solar Inverter
  • Network Power Supply
  • Charging Stations

  • Max RDS(on) = 56m惟 at Vgs = 20V, Id = 35A
  • High Speed Switching and Low Capacitance
  • 100% UIL Tested
  • 1200V Rated

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NTH4L040N120SC1

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Active

CAD Model

Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

Y

M1

1200

58

40

106

137

175

$11.838

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Reliability Data

Die Related Summary Data

Device: NTH4L040N120SC1

Equivalent to wafer fab process: SIC

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Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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