ÃÄÈËÊÓÆµ

Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L

Active

Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC-DC Converter
  • Boost Inverter
  • UPS

  • Solar
  • Power Devices

  • High Junction Temperature
  • 900V Rating
  • 100% UIL Tested
  • RoHS Compliant

Tools and Resources

Product services, tools and other useful resources related to NTH4L060N090SC1

Product List

If you wish to buy products or product samples, please log in to your ÃÄÈËÊÓÆµ account.

Search

Close Search

ÃÄÈËÊÓÆµ:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Reference Price

NTH4L060N090SC1

Loading...

Active

CAD Model

Pb

A

H

P

TO-247-4

NA

0

TUBE

450

F

M2

900

67

60

61.8

107

175

$6.5296

More Details

Show More

1-25 of 25

ÃÄÈËÊÓÆµ per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with ÃÄÈËÊÓÆµ sales team.