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Silicon Carbide (SiC) MOSFETs | NVBG020N120SC1

Silicon Carbide (SiC) MOSFET, N鈥怌hannel - EliteSiC, 20 mohm, 1200V, M1, D2PAK鈭�7L

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Overview

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • High power DCDC
  • Inverter

  • Automotive DC/DC converter for EV/PHEV
  • Automotive Inverters

  • 1200V rated
  • Qualified for Automotive According to AEC鈭扱101
  • Max RDS(on) = 28 m惟 at Vgs = 20V, Id = 60A
  • High Speed Switching and Low Capacitance
  • 100% UIL Tested
  • Devices are RoHS Compliant

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NVBG020N120SC1

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CAD Model

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

418BJ

1

245

REEL

800

Y

M1

1200

98

20

220

258

175

$31.8634

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Reliability Data

Die Related Summary Data

Device: NVBG020N120SC1

Equivalent to wafer fab process: SIC

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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