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Silicon Carbide (SiC) MOSFETs | NVBG040N120M3S

Silicon Carbide (SiC) MOSFET-聽EliteSiC, 40 mohm, 1200 V, M3S,聽D2PAK-7L

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Overview

1200V M3S planar EliteSiC MOSFET is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

  • On Board Charger (OBC)
  • DC/DC converters for EV/HEV

  • Automotive EV/HEV

  • Typical RDS(on) = 40m惟 at Vgs =18V, Id = 25A
  • Qualified for Automotive According to AEC鈭扱101
  • New M3S technology: 40.8mohm RDS(ON) with low EON and EOFF losses
  • 15V to 18V Gate Drive
  • Devices are Pb鈭扚ree and are RoHS Compliant

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NVBG040N120M3S

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Pb

A

H

P

D2PAK7 (TO-263-7L HV)

418BJ

1

260

REEL

800

F

M3S

1200

57

40

75

80

175

$11.773

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