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Silicon Carbide (SiC) MOSFETs | NVH4L040N120M3S

Silicon Carbide (SiC) MOSFET-聽EliteSiC, 40 mohm, 1200 V, M3S, TO247-4L

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Overview

EliteSiC  MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.

  • On Board Charger (OBC)
  • DC/DC converters for EV/HEV

  • Automotive EV/HEV

  • Typical RDS(on) = 40.8m惟 at Vgs =18V, Id = 25A
  • Qualified for Automotive According to AEC鈭扱101
  • New M3S technology: 40.8mohm RDS(ON) with low EON and EOFF losses
  • 15V to 18V Gate Drive
  • Devices are Pb鈭扚ree and are RoHS Compliant

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NVH4L040N120M3S

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CAD Model

Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

F

M3S

1200

54

40

75

80

175

$12.164

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